 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 1SS83 SILICON EPITAXIAL PLANAR DIODE High Voltage Switching Diode Max. 0.5 Features * High reverse voltage (VR = 250 V) * High reliability with glass seal Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. Black "ST" Brand XXX ST Max. 3.9 Min. 27.5 Glass Case DO-35 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Average Forward Current Peak Forward Current Non-Repetitive Peak Forward Surge Current (at t = 1 s) Power Dissipation Junction Temperature Storage Temperature Range Symbol VRM VR IO IFM IFSM Ptot TJ Tstg Value 300 250 200 625 1 400 175 - 65 to + 175 Unit V V mA mA A mW O C C O Electrical Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 250 V at VR = 300 V Total Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at IF = IR = 30 mA, Irr = 3 mA, RL = 100 Symbol VF Typ. Max. 1 Unit V IR 1.5 - 0.2 100 100 A CT trr pF ns SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/06/2007 |
Price & Availability of 1SS83
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |